Bismuth Germanate
Crystals
of Evlitine structure (Bi4Ge3O12)
became well known primarily due to its wide application as
scintillation material for high energy physics. However this crystal
processes also relatively high electro-optic coefficients which makes it
useful for building Pockels cells, particularly, for application in
optical fiber electric field sensors with high thermal stability. The
crystal can be used also for photorefractive devices working in the UV
range.
ELAN fabricates custom designed elements of Bi4Ge3O12
crystals grown by Czochralsky method and carefully selected and tested
for high optical homogeneity, absence of bubbles, inclusions and other
defects.
Material Properties
|
Crystal
symmetry
|
Cubic, 43m
|
|
Lattice parameter, A
|
10.526
|
|
Density, g/cm3
|
7.12
|
|
Mohs hardness
|
5
|
|
Melting point , °C
|
1040
|
|
Transparency range, ΅
|
0.3 - 5
|
|
Refractive Index
|
2.10
|
|
Optical Absorption, cm-1
|
1.0
|
|
Electro-Optical Coefficient (r41),pm/V
|
1.0
|
|
Dielectric Constant
( low frequency)
|
16
|
NOTE
1.
If
not specified, optical properties are given for wavelength 633 nm.
2.
Finished
elements are available in sizes (330)x(330)x(3120) mm3. Wafers
with diameter up to 60 mm, or 40x40 mm square, 0.5 - 10.0 mm thick are
available.
3.
Polish
standard: 40/20 S/D, 1/2 wave flatness, parallelism < 3
4.
Coatings
available:
a) AR @ 514.5 nm, 532 nm or other on request
b) ITO conductive/transparent coatings
c) electrodes Cr + Au
|
