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SILICON Si
Silicon is commonly used as substrate material for infrared reflectors and
windows in the 1.5 - 8 micron region. The strong absorption band at 9 microns
makes it unsuitable for CO2 laser transmission applications, but it
is frequently used for laser mirrors because of its high thermal conductivity
and low density. Silicon is also useful as a transmitter in the 20 micron range.
Maximum available size: 102 mm Dia x 50 mm Thk.

Main Properties
| Chemical Formula |
Si |
| Molecular Weight |
28.09 |
| Crystal Class |
Cubic |
| Lattice Constant, Å |
5.43 |
| Density, g/cm3 at 293 K |
2.329 |
| Dielectric Constant for 9.37 x 109 Hz |
13 |
| Melting Point, K |
1690 |
Thermal Conductivity, W/(m K)
at 125 K
at 313 K
at 400 K |
598.6
163
105.1 |
Thermal Expansion, 1/K
at 75 K
at 293 K
at 1400 K |
-0.5 x 10-6
2.6 x 10-6
4.6 x 10-6 |
Specific Heat, cal/(g K)
at 298 K
at 1800 K |
0.18
0.253 |
| Debye Temperature, K |
640 |
| Bandgap, eV |
1.1 |
| Solubility in water |
None |
| Knoop Hardness, kg/mm2 |
1100 |
| Mohs Hardness |
7 |
| Young's Modulus, GPa |
130.91 |
| Shear Modulus, GPa |
79.92 |
| Bulk Modulus, GPa |
101.97 |
| Poisson's Ratio |
0.28 |
Refractive Index
| Wavelength, µm |
1.40 |
1.50 |
1.66 |
1.82 |
2.05 |
2.50 |
3.50-5.00 |
6.00-25.00 |
| Refractive Index |
3.49 |
3.48 |
3.47 |
3.46 |
3.45 |
3.44 |
3.43 |
3.42 |
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